The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 22, 2020

Filed:

Sep. 17, 2018
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Shinya Iwashita, Yamanashi, JP;

Takamichi Kikuchi, Yamanashi, JP;

Naotaka Noro, Yamanashi, JP;

Toshio Hasegawa, Yamanashi, JP;

Tsuyoshi Moriya, Yamanashi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/26 (2006.01); C23C 16/52 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02274 (2013.01); C23C 16/26 (2013.01); C23C 16/405 (2013.01); C23C 16/4554 (2013.01); C23C 16/45527 (2013.01); C23C 16/45542 (2013.01); C23C 16/52 (2013.01); H01L 21/022 (2013.01); H01L 21/0228 (2013.01); H01L 21/02186 (2013.01); H01L 21/02205 (2013.01);
Abstract

Disclosed is a film forming method including forming a metal oxide film on a base film by alternately supplying a metal-containing gas and a plasmatized oxidizing gas. The metal-containing gas is changed from a first metal-containing gas having no halogen to a second metal-containing gas different from the first metal-containing gas during the film forming of the metal oxide film.


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