The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2020
Filed:
May. 28, 2019
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Tzu-Ching Lin, Hsinchu, TW;
Chien-Chih Lin, Taichung, TW;
Feng-Ching Chu, Pingtung, TW;
Li-Li Su, ChuBei, TW;
Chii-Horng Li, Zhubei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A method of forming a semiconductor device includes forming a fin protruding above a substrate; forming a gate structure over the fin; forming a recess in the fin adjacent to the gate structure; and forming a source/drain region in the recess, the source/drain region including a first layer, a second layer, and a third layer, where forming the source/drain region includes performing a first epitaxy process under first process conditions to form the first layer in the recess, the first layer extending along surfaces of the fin exposed by the recess; performing a second epitaxy process under second process conditions to form the second layer over the first layer; and performing a third epitaxy process under third process conditions to form the third layer over the second layer, the third layer filling the recess, where the first processing conditions, the second process conditions and the third process conditions are different.