The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2020
Filed:
Jun. 15, 2015
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin-Chu, TW;
Inventors:
Yu-Hung Lin, Taichung, TW;
Hon-Lin Huang, Hsinchu, TW;
Rueijer Lin, Hsinchu, TW;
Shih-Chi Lin, Hsinchu, TW;
Sheng-Hsuan Lin, Zhubei, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H01L 21/823468 (2013.01); H01L 21/823475 (2013.01);
Abstract
A semiconductor structure and a method for forming the same are provided. The method for manufacturing a semiconductor structure includes forming a gate structure over a substrate and forming a spacer on a sidewall of the gate structure. The method for manufacturing a semiconductor structure further includes forming a hard mask structure on a top surface of the gate structure and on an upper portion of the spacer but not on a bottom portion of the spacer.