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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10818794 B1

PDFFull Text
Date of Patent:
Oct. 27, 2020

Filed:

Jul. 15, 2019

Semiconductor structure and fabricating method thereof

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Che-Cheng Chang, New Taipei, TW;

Tung-Wen Cheng, New Taipei, TW;

Chang-Yin Chen, Taipei, TW;

Mu-Tsang Lin, Hemei Township, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

David C Spalla

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 29/08 (2006.01); H01L 29/165 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7851 (2013.01); H01L 21/0223 (2013.01); H01L 21/30604 (2013.01); H01L 21/31055 (2013.01); H01L 21/31144 (2013.01); H01L 21/32133 (2013.01); H01L 21/32139 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/42368 (2013.01); H01L 29/495 (2013.01); H01L 29/4958 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01); H01L 29/6656 (2013.01); H01L 29/6681 (2013.01); H01L 29/66545 (2013.01); H01L 29/66636 (2013.01); H01L 29/66795 (2013.01); H01L 29/7848 (2013.01); H01L 21/02255 (2013.01); H01L 21/31116 (2013.01); H01L 21/31122 (2013.01); H01L 21/32136 (2013.01); H01L 29/51 (2013.01);
Abstract

A semiconductor structure and a method of fabricating the semiconductor structure are provided. The semiconductor structure includes a substrate; a metal gate structure on the substrate; and a spacer next to the metal gate structure having a skirting part extending into the metal gate structure and contacting the substrate. The metal gate structure includes a high-k dielectric layer and a metal gate electrode on the high-k dielectric layer.

Find Patent Forward Citations

Chang, Che-Cheng. (2020). Semiconductor structure and fabricating method thereof (U.S. Patent No. 10818794). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10818794

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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