The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2020
Filed:
May. 03, 2019
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
U-Ting Chen, Wanluan Township, TW;
Shu-Ting Tsai, Kaohsiung, TW;
Cheng-Ying Ho, Minxiong Township, TW;
Tzu-Hsuan Hsu, Kaohsiung, TW;
Shih-Pei Chou, Tainan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
An image sensor includes a sensor portion and an ASIC portion bonded to the sensor portion. The sensor portion includes a first substrate having radiation-sensing pixels, a first interconnect structure, a first isolation layer, and a first dielectric layer. The ASIC portion includes a second substrate, a second isolation layer, and a second dielectric layer. The material compositions of the first and second isolation layers and the first and second dielectric layers are configured such that the first and second isolation layers may serve as barrier layers to prevent copper diffusion into oxide. The first and second isolation layers may also serve as etching-stop layers in the formation of the image sensor.