The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2020
Filed:
Mar. 26, 2019
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Eun-Hee Jeang, Paju-si, KR;
Aleksandr Shorokhov, Tula, RU;
Anton Medvedev, Korolev, RU;
Maksim Riabko, Dolgoprudny, RU;
Sang-Woo Bae, Seoul, KR;
Akinori Okubo, Hwaseong-si, KR;
Sang-Min Lee, Yongin-si, KR;
Seong-Keun Cho, Suwon-si, KR;
Won-Don Joo, Incheon, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/88 (2006.01); G01N 21/21 (2006.01);
U.S. Cl.
CPC ...
G01N 21/8806 (2013.01); G01N 21/21 (2013.01); G01N 2021/8848 (2013.01); G01N 2201/0683 (2013.01);
Abstract
In a method of detecting a defect on a substrate, an incident beam may be radiated to a surface of the substrate to generate reflected light beams. A second harmonic generation (SHG) beam among the reflected light beams may be detected. The SHG beam may be generated by a defect on the substrate. A nano size defect may be detected by examining the SHG beam.