The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2020
Filed:
Sep. 11, 2018
Tokyo Electron Limited, Minato-ku, Tokyo, JP;
Christopher Talone, Slingerlands, NY (US);
Erdinc Karakas, Portland, OR (US);
Andrew Nolan, Kurokawa-gun, JP;
Sergey A. Voronin, Glenmont, NY (US);
Alok Ranjan, Austin, TX (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
Provided is a method of modifying a surface of a substrate for improved etch selectivity of nitride etching. In an embodiment, the method includes providing a substrate with a nitride-containing structure, the nitride-containing structure having an oxygen-nitrogen layer. The method may also include performing a surface modification process on the nitride-containing structure with the oxygen-nitrogen layer using one or more gases, the surface modification process generating a cleaned nitride-containing structure. Additionally, the method may include performing a nitride etch process using the cleaned nitride-containing structure, wherein the etched nitride-containing structure are included in 5 nm or lower technology nodes, and the nitride etch process meets target etch rate and target etch selectivity, and the cleaned nitride-containing structure meet target residue cleaning objectives.