The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2020

Filed:

Apr. 12, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Chien Ling Hwang, Hsinchu, TW;

Yeong-Jyh Lin, Caotun Township, TW;

Bor-Ping Jang, Chu-Bei, TW;

Hsiao-Chung Liang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/10 (2006.01); H01L 23/14 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01); H01L 21/48 (2006.01);
U.S. Cl.
CPC ...
H01L 24/14 (2013.01); H01L 21/4853 (2013.01); H01L 23/147 (2013.01); H01L 23/49811 (2013.01); H01L 25/105 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/32225 (2013.01); H01L 2225/1023 (2013.01); H01L 2225/1058 (2013.01); H01L 2924/157 (2013.01); H01L 2924/1579 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/15331 (2013.01); H01L 2924/181 (2013.01); H01L 2924/18161 (2013.01); H01L 2924/3841 (2013.01);
Abstract

The present disclosure, in some embodiments, relates to a semiconductor structure. The semiconductor structure includes a substrate and a first conductive pad arranged over the substrate. A boundary structure is on an upper surface of the substrate around the first conductive pad. The boundary structure has one or more sidewalls defining an opening with a round shape over the first conductive pad.


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