The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2020

Filed:

Sep. 26, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Shih-Han Huang, Kaohsiung, TW;

Ching-Chun Wang, Tainan, TW;

Dun-Nian Yaung, Taipei, TW;

Hsing-Chih Lin, Tainan, TW;

Jen-Cheng Liu, Hsin-Chu, TW;

Min-Feng Kao, Chiayi, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/822 (2006.01); H01L 23/522 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2006.01); H01L 27/06 (2006.01); H01F 17/00 (2006.01); H01F 41/04 (2006.01); H01L 21/768 (2006.01); H01L 27/08 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/8221 (2013.01); H01F 17/0013 (2013.01); H01F 41/041 (2013.01); H01L 21/76877 (2013.01); H01L 23/5227 (2013.01); H01L 24/08 (2013.01); H01L 24/74 (2013.01); H01L 24/80 (2013.01); H01L 25/0657 (2013.01); H01L 27/0688 (2013.01); H01L 27/08 (2013.01); H01L 28/10 (2013.01); H01F 2017/002 (2013.01); H01F 2017/004 (2013.01); H01F 2017/0086 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05558 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/08146 (2013.01); H01L 2224/13101 (2013.01); H01L 2224/80895 (2013.01); H01L 2924/14 (2013.01);
Abstract

The present disclosure, in some embodiments, relates to a method of forming an integrated chip. The method may be performed by forming a first conductive wire within a first dielectric structure formed on a first surface of a first substrate. A through-substrate-via (TSV) is formed to extend though the first substrate. A second conductive wire is formed within a second dielectric structure formed on a second surface of the first substrate opposing the first surface. The TSV electrically couples the first conductive wire and the second conductive wire. The first conductive wire, the second conductive wire, and the TSV define an inductor that wraps around an axis.


Find Patent Forward Citations

Huang, Shih-Han. (2020). Inductor structure for integrated circuit (U.S. Patent No. 10804155). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10804155

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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