The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2020

Filed:

Aug. 06, 2019
Applicant:

Disco Corporation, Tokyo, JP;

Inventors:

Meiyu Piao, Tokyo, JP;

Kentaro Odanaka, Tokyo, JP;

Masatoshi Wakahara, Tokyo, JP;

Wakana Onoe, Tokyo, JP;

Heidi Lan, Tokyo, JP;

Assignee:

DISCO CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); H01L 21/67 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/78 (2013.01); H01L 21/6715 (2013.01); H01L 21/67069 (2013.01); H01L 21/67092 (2013.01); H01L 21/67132 (2013.01); H01J 37/321 (2013.01); H01J 37/32724 (2013.01); H01J 2237/002 (2013.01); H01J 2237/334 (2013.01);
Abstract

A wafer processing method includes the following steps: forming, on a back side of a wafer including a device layer, a mask to be used in forming grooves in a substrate along streets from the back side of the wafer; applying plasma etching from the back side of the wafer through the mask to form the grooves in the substrate along the streets; ejecting high-pressure fluid against the back side of the wafer with the wafer mounted at its front side on a mounting surface to press the wafer at regions surrounded by the etched grooves; and bonding a tape to the front side of the wafer before performance of at least the pressing step.


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