The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2020
Filed:
Oct. 08, 2018
Globalfoundries Inc., Grand Cayman, KY;
Ravi Prakash Srivastava, Clifton Park, NY (US);
Hsueh-Chung Chen, Cohoes, NY (US);
Steven McDermott, Wynantskill, NY (US);
Martin O'Toole, Saratoga Springs, NY (US);
Brendan O'Brien, Ballston Spa, NY (US);
Terry A. Spooner, Halfmoon, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
Methods of self-aligned multiple patterning. First and second mandrels are formed over a hardmask, and a conformal spacer layer is deposited over the first mandrel, the second mandrel, and the hardmask between the first mandrel and the second mandrel. A planarizing layer is patterned to form first and second trenches that expose first and second lengthwise portions of the conformal spacer layer respectively between the first and second mandrels. After patterning the planarizing layer, the first and second lengthwise portions of the conformal spacer layer are removed with an etching process to expose respective portions of the hardmask along a non-mandrel line. A third lengthwise portion of the conformal spacer layer is masked during the etching process by a portion of the planarizing layer and defines a non-mandrel etch mask.