The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2020

Filed:

Nov. 04, 2019
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Chi-Yang Yu, Taoyuan County, TW;

Chien-Kuo Chang, Hsinchu County, TW;

Chih-Hao Lin, Hsinchu, TW;

Jung Tsung Cheng, Hsinchu, TW;

Kuan-Lin Ho, Hsinchu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 23/498 (2006.01); H01L 23/31 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2006.01); H01L 23/10 (2006.01); H01L 25/00 (2006.01); H01L 23/552 (2006.01); H01L 23/04 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823481 (2013.01); H01L 21/56 (2013.01); H01L 23/10 (2013.01); H01L 23/3185 (2013.01); H01L 23/49816 (2013.01); H01L 23/49827 (2013.01); H01L 24/02 (2013.01); H01L 24/92 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 23/04 (2013.01); H01L 23/552 (2013.01); H01L 23/562 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/17 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/33 (2013.01); H01L 24/81 (2013.01); H01L 24/83 (2013.01); H01L 2224/1132 (2013.01); H01L 2224/11334 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13024 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13116 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16235 (2013.01); H01L 2224/17181 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/33181 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73253 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/83102 (2013.01); H01L 2224/83104 (2013.01); H01L 2224/9202 (2013.01); H01L 2224/92222 (2013.01); H01L 2224/92225 (2013.01); H01L 2224/92242 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06537 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06568 (2013.01); H01L 2225/06589 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/16724 (2013.01); H01L 2924/16747 (2013.01); H01L 2924/3025 (2013.01); H01L 2924/3512 (2013.01);
Abstract

A semiconductor structure includes a substrate including a first surface and a second surface opposite to the first surface; a dielectric layer disposed over the second surface or below the first surface; a polymeric layer disposed over or below the dielectric layer; an isolation layer surrounding and contacted with the substrate, the dielectric layer and the polymeric layer; a die disposed over the polymeric layer; a first conductive bump disposed below the first surface of the substrate; and a second conductive bump disposed between the second surface of the substrate and the die.


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