The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2020

Filed:

Sep. 10, 2018
Applicant:

Carl Zeiss Smt Gmbh, Oberkochen, DE;

Inventors:

Dirk Hellweg, Langenau, DE;

Markus Koch, Neu-Ulm, DE;

Renzo Capelli, Heidenheim, DE;

Assignee:

Carl Zeiss SMT GmbH, Oberkochen, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/22 (2012.01); G03F 1/84 (2012.01); G03F 1/72 (2012.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 1/22 (2013.01); G03F 1/72 (2013.01); G03F 1/84 (2013.01); G03F 7/70666 (2013.01);
Abstract

The invention relates to a method for examining a photolithographic mask for the extreme ultraviolet (EUV) wavelength range in a mask metrology apparatus. In this method, at least one structured region of the mask is selected, a scanner photon number in the extreme ultraviolet (EUV) wavelength range for which the mask in the lithographic production run is provided and a metrology photon number in the extreme ultraviolet (EUV) wavelength range with which the measurement is performed are determined. Next, a photon statistics examination mode is established on the basis of the scanner photon number and the metrology photon number and at least one aerial image of the at least one structured region is produced with the mask metrology apparatus.


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