The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2020
Filed:
Dec. 13, 2018
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Chih-Tsung Shih, Hsinchu, TW;
Jeng-Horng Chen, Hsin-Chu, TW;
Shinn-Sheng Yu, Hsinchu, TW;
Anthony Yen, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
The present disclosure provides a photolithography mask. The photolithography mask includes a substrate that contains a low thermal expansion material (LTEM). A multilayer (ML) structure is disposed over the substrate. The ML structure is configured to reflect radiation. The ML structure contains a plurality of interleaving film pairs. Each film pair includes a first film and a second film. The first film and the second film have different material compositions. Each film pair has a respective thickness. For at least a subset of the plurality of the film pairs, the respective thicknesses of the film pairs change randomly along a predefined direction.