The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2020
Filed:
Oct. 24, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Long-Yi Chen, Changhua County, TW;
Jia-Hong Chu, Hsinchu, TW;
Chi-Wen Lai, Kaohsiung, TW;
Chia-Ching Liang, Hualien County, TW;
Kai-Hsiung Chen, New Taipei, TW;
Yu-Ching Wang, Tainan, TW;
Po-Chung Cheng, Zhongpu Township, Chiayi County, TW;
Hsin-Chin Lin, Yunlin County, TW;
Meng-Wei Chen, Taichung, TW;
Kuei-Shun Chen, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method for forming a semiconductor device structure is provided. The method includes forming a first overlay grating over a substrate. The method includes forming a layer over the first overlay grating. The method includes forming a second overlay grating over the layer. The second overlay grating has a third strip portion and a fourth strip portion, the third strip portion and the fourth strip portion are elongated in the first elongated axis and are spaced apart from each other, there is a second distance between a third sidewall of the third strip portion and a fourth sidewall of the fourth strip portion, the third sidewall faces away from the fourth strip portion, the fourth sidewall faces the third strip portion, the first distance is substantially equal to the second distance, and the first trench extends across the third strip portion and the fourth strip portion.