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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10731249 B1

PDFFull Text
Date of Patent:
Aug. 04, 2020

Filed:

Feb. 15, 2018

Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus

Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Timo Hatanpää, Espoo, FI;

Katja Väyrynen, Helsinki, FI;

Mikko Ritala, Espoo, FI;

Markku Leskelä, Espoo, FI;

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:

Snell & Wilmer, L.L.P.

Primary Examiner:

Mandy C Louie

Int. Cl.
CPC ...
C23C 16/455 (2006.01); H01L 21/285 (2006.01); C23C 16/40 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45527 (2013.01); C23C 16/406 (2013.01); C23C 16/45523 (2013.01); C23C 16/45553 (2013.01); H01L 21/28568 (2013.01); H01L 21/768 (2013.01); H01L 21/76879 (2013.01); H01L 23/53209 (2013.01); H01L 21/76843 (2013.01); H01L 23/53238 (2013.01);
Abstract

A method of forming a transition metal containing films on a substrate by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a bidentate nitrogen containing adduct ligand; and contacting the substrate with a second vapor phase reactant. A method for supplying a transition metal halide compound comprising a bidentate nitrogen containing ligand to a reaction chamber is disclosed, along with related vapor deposition apparatus.

Find Patent Forward Citations

Hatanpää, Timo. (2020). Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus (U.S. Patent No. 10731249). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10731249

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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