The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2020
Filed:
Jun. 17, 2016
Rohm and Haas Electronic Materials Cmp Holdings, Inc., Newark, DE (US);
Nitta Haas Incorporated, Osaka, JP;
Dow Global Technologies Llc, Midland, MI (US);
Thomas P. Willumstad, Pearland, TX (US);
Bainian Qian, Newark, DE (US);
Rui Xie, Pearland, TX (US);
Kenjiro Ogata, Osaka, JP;
George C. Jacob, Newark, DE (US);
Marty W. DeGroot, Middletown, DE (US);
Rohm and Haas Electronic Materials CMP Holdings, Inc., Newark, DE (US);
Nitta Haas Inc., Osaka, JP;
Dow Global Technologies LLC, Midland, MI (US);
Abstract
A chemical mechanical polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising (i) one or more diisocyanate, polyisocyanate or polyisocyanate prepolymer, (ii) from 40 to 85 wt. % based on the total weight of (i) and (ii) of one or more blocked diisocyanate, polyisocyanate or polyisocyanate prepolymer which contains a blocking agent and has a deblocking temperature of from 80 to 160° C., and (iii) one or more aromatic diamine curative. The reaction mixture has a gel time at 80° C. and a pressure of 101 kPa of from 2 to 15 minutes; the polyurethane reaction product has a residual blocking agent content of 2 wt. % or less; and the polishing layer exhibits a density of from 0.6 to 1.2 g/cm.