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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10714466 B1

PDFFull Text
Date of Patent:
Jul. 14, 2020

Filed:

Jan. 23, 2019

Layout pattern for magnetoresistive random access memory

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Chung-Liang Chu, Kaohsiung, TW;

Chih-Hsien Tang, Tainan, TW;

Yu-Ruei Chen, New Taipei, TW;

Ya-Huei Tsai, Tainan, TW;

Rai-Min Huang, Taipei, TW;

Chueh-Fei Tai, Tainan, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;

Attorney:

Winston Hsu

Primary Examiner:

Stephen W Smoot

Int. Cl.
CPC ...
H01L 27/22 (2006.01); H01L 27/02 (2006.01); G03F 1/36 (2012.01); H01L 43/12 (2006.01); H01L 43/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0207 (2013.01); G03F 1/36 (2013.01); H01L 27/222 (2013.01); H01L 27/224 (2013.01); H01L 27/228 (2013.01); H01L 43/02 (2013.01); H01L 43/12 (2013.01);
Abstract

A layout pattern for magnetoresistive random access memory (MRAM) includes: a first magnetic tunneling junction (MTJ) pattern on a substrate; a second MTJ pattern adjacent to the first MTJ pattern; and a first metal interconnection pattern between the first MTJ pattern and the second MTJ pattern, wherein the first MTJ pattern, the first metal interconnection pattern, and the second MTJ pattern comprise a staggered arrangement.

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Chu, Chung-Liang. (2020). Layout pattern for magnetoresistive random access memory (U.S. Patent No. 10714466). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10714466

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