The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2020

Filed:

Dec. 21, 2018
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Shin-Yi Yang, New Taipei, TW;

Ming-Han Lee, Taipei, TW;

Shau-Lin Shue, Hsinchu, TW;

Tz-Jun Kuo, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 21/76808 (2013.01); H01L 21/76844 (2013.01); H01L 21/76855 (2013.01); H01L 21/76864 (2013.01); H01L 21/76877 (2013.01); H01L 21/76879 (2013.01); H01L 23/53214 (2013.01); H01L 23/53228 (2013.01); H01L 23/53233 (2013.01); H01L 23/53238 (2013.01); H01L 23/53242 (2013.01); H01L 23/53257 (2013.01); H01L 23/53271 (2013.01); H01L 29/42376 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A device includes a first conductive feature disposed over a substrate; a second conductive feature disposed directly on and in physical contact with the first conductive feature; a dielectric layer surrounding sidewalls of the second conductive feature; and a first barrier layer interposed between the second conductive feature and the dielectric layer and in physical contact with both the second conductive feature and the dielectric layer. The first barrier layer and the dielectric layer comprise at least two common elements.


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