The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2020
Filed:
Mar. 15, 2017
Tokyo Electron Limited, Tokyo, JP;
Noriaki Fukiage, Nirasaki, JP;
Takayuki Karakawa, Nirasaki, JP;
Toyohiro Kamada, Nirasaki, JP;
Akihiro Kuribayashi, Nirasaki, JP;
Takeshi Oyama, Nirasaki, JP;
Jun Ogawa, Nirasaki, JP;
Kentaro Oshimo, Nirasaki, JP;
Shimon Otsuki, Nirasaki, JP;
Hideomi Hane, Nirasaki, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
A method for forming a silicon nitride film to cover a stepped portion formed by exposed surfaces of first and second base films in a substrate, includes: forming a nitride film or a seed layer to cover the stepped portion, wherein the nitride film is formed by supplying, to the substrate, a nitrogen-containing base-film nitriding gas for nitriding the base films, exposing the substrate to plasma and nitriding the surface of the stepped portion, and the seed layer is composed of a silicon-containing film formed by supplying a raw material gas of silicon to the substrate and is configured such that the silicon nitride film uniformly grows on the surfaces of the base films; and forming the silicon nitride film on the seed layer by supplying, to the substrate, a second raw material gas of silicon and a silicon-nitriding gas for nitriding silicon.