The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2020

Filed:

Jul. 09, 2018
Applicant:

Stats Chippac Pte. Ltd., Singapore, SG;

Inventors:

Il Kwon Shim, Singapore, SG;

Yaojian Lin, Jiangyin, CN;

Pandi C. Marimuthu, Singapore, SG;

Kang Chen, Singapore, SG;

Yu Gu, Singapore, SG;

Assignee:

STATS ChipPAC Pte. Ltd., Singapore, SG;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 21/56 (2006.01); H01L 25/10 (2006.01); H01L 25/00 (2006.01); H01L 23/538 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/561 (2013.01); H01L 21/563 (2013.01); H01L 21/565 (2013.01); H01L 23/3121 (2013.01); H01L 23/3128 (2013.01); H01L 23/49816 (2013.01); H01L 23/49827 (2013.01); H01L 23/49833 (2013.01); H01L 23/5389 (2013.01); H01L 24/11 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 24/96 (2013.01); H01L 24/97 (2013.01); H01L 25/105 (2013.01); H01L 25/50 (2013.01); H01L 23/49838 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/05548 (2013.01); H01L 2224/05552 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/24155 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73267 (2013.01); H01L 2224/94 (2013.01); H01L 2224/97 (2013.01); H01L 2225/107 (2013.01); H01L 2225/1035 (2013.01); H01L 2225/1058 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/181 (2013.01); H01L 2924/3511 (2013.01);
Abstract

A semiconductor device has a semiconductor package and an interposer disposed over the semiconductor package. The semiconductor package has a first semiconductor die and a modular interconnect unit disposed in a peripheral region around the first semiconductor die. A second semiconductor die is disposed over the interposer opposite the semiconductor package. An interconnect structure is formed between the interposer and the modular interconnect unit. The interconnect structure is a conductive pillar or stud bump. The modular interconnect unit has a core substrate and a plurality of vertical interconnects formed through the core substrate. A build-up interconnect structure is formed over the first semiconductor die and modular interconnect unit. The vertical interconnects of the modular interconnect unit are exposed by laser direct ablation. An underfill is deposited between the interposer and semiconductor package. A total thickness of the semiconductor package and build-up interconnect structure is less than 0.4 millimeters.


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