The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2020

Filed:

Jul. 26, 2018
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, Hubei, CN;

Inventors:

Shuai Guo, Hubei, CN;

Jia Wen Wang, Hubei, CN;

Tao Tao Ding, Hubei, CN;

Rui Yuan Xing, Hubei, CN;

Xiao Jin Wang, Hubei, CN;

Jia You Wang, Hubei, CN;

Chun Long Li, Hubei, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/18 (2006.01); H01L 21/20 (2006.01); H01L 21/762 (2006.01); H01L 21/02 (2006.01); H01L 21/26 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 21/187 (2013.01); H01L 21/02057 (2013.01); H01L 21/2007 (2013.01); H01L 21/26 (2013.01); H01L 21/324 (2013.01); H01L 21/76251 (2013.01);
Abstract

Embodiments of wafer bonding method and structures thereof are disclosed. The wafer bonding method can include performing a plasma activation treatment on a front surface of a first and a front surface of a second wafer; performing a silica sol treatment on the front surfaces of the first and the second wafers; performing a preliminary bonding process of the first and second wafer; and performing a heat treatment of the first and the second wafers to bond the front surface of the first wafer to the front surface of the second wafers.


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