The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2020
Filed:
Jun. 15, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Hsin-Ping Chen, Hsinchu County, TW;
Carlos H. Diaz, Mountian View, CA (US);
Ken-Ichi Goto, Hsinchu, TW;
Shau-Lin Shue, Hsinchu, TW;
Tai-I Yang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A NEMS device structure and a method for forming the same are provided. The NEMS device structure includes a substrate and an interconnect structure formed over the substrate. The NEMS device structure includes a dielectric layer formed over the interconnect structure and a beam structure formed in and over the dielectric layer, wherein the beam structure includes a plurality of strip structures. The NEMS device structure includes a cap structure formed over the dielectric layer and the beam structure and a cavity formed between the beam structure and the cap structure.