The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2020

Filed:

Aug. 30, 2017
Applicant:

Hitachi High-technologies Corporation, Minato-ku, Tokyo, JP;

Inventors:

Miyako Matsui, Tokyo, JP;

Kenichi Kuwahara, Tokyo, JP;

Naoki Yasui, Tokyo, JP;

Masaru Izawa, Tokyo, JP;

Tatehito Usui, Tokyo, JP;

Takeshi Ohmori, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01L 21/66 (2006.01); H01L 21/3213 (2006.01); H01L 21/311 (2006.01); H01L 21/3065 (2006.01); H01L 21/306 (2006.01); H01J 37/32 (2006.01); G01B 11/06 (2006.01);
U.S. Cl.
CPC ...
H01L 22/26 (2013.01); G01B 11/0625 (2013.01); G01B 11/0675 (2013.01); H01J 37/32082 (2013.01); H01J 37/32449 (2013.01); H01L 21/306 (2013.01); H01L 21/31116 (2013.01); H01L 21/31122 (2013.01); H01L 21/31144 (2013.01); H01L 21/32135 (2013.01); H01L 21/67069 (2013.01); H01L 21/67253 (2013.01); H01J 2237/006 (2013.01); H01J 2237/3347 (2013.01); H01L 22/12 (2013.01);
Abstract

The present invention relates to an etching method including a reaction layer forming step of forming a reaction layer by adsorption of a gas on a surface of an etching target material, a desorption step of desorbing the reaction layer after the reaction layer forming step, and a removal step of removing the reaction layer or a deposited film, characterized in that the surface of the etching target material is etched by the reaction layer forming step and the desorption step.


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