The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2020

Filed:

Feb. 06, 2018
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

You-Hua Chou, Taipei, TW;

Yi-Jen Lai, Chang Hua, TW;

Chun-Jen Chen, Jhubei, TW;

Perre Kao, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/473 (2006.01); H01L 23/488 (2006.01); H01L 23/48 (2006.01); H01L 23/36 (2006.01); H01L 25/065 (2006.01); H01L 23/00 (2006.01); H01L 23/42 (2006.01); H01L 23/367 (2006.01);
U.S. Cl.
CPC ...
H01L 23/473 (2013.01); H01L 23/36 (2013.01); H01L 23/3677 (2013.01); H01L 23/42 (2013.01); H01L 23/48 (2013.01); H01L 23/488 (2013.01); H01L 24/11 (2013.01); H01L 24/80 (2013.01); H01L 24/81 (2013.01); H01L 25/0657 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/16145 (2013.01); H01L 2924/014 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/15 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/351 (2013.01);
Abstract

A method of preparing a semiconductor substrate with metal bumps on both sides of the substrate includes depositing a first-side UBM layer on a first surface of the substrate, and forming a plurality of first-side metal bumps on the first surface of the substrate after the first-side UBM layer is deposited. The method includes forming a second-side UBM layer on a second side of the substrate, and the first surface and the second surface are opposite of each other. The method includes forming a plurality of second-side metal bumps on the second surface of the substrate after the second-side UBM layer is deposited. The method includes removing exposed first-side UBM layer and exposed second-side UBM layer after the plurality of first-side metal bumps and the plurality of second-side metal bumps are formed. The method includes reflowing the plurality of first-side metal bumps and the plurality of second side metal bumps.


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