The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2020

Filed:

Jun. 03, 2016
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Tomohiko Kitajima, San Jose, CA (US);

Jeffrey Drue David, San Jose, CA (US);

Jun Qian, Sunnyvale, CA (US);

Taketo Sekine, Cupertino, CA (US);

Garlen C. Leung, Campbell, CA (US);

Sidney P. Huey, Fremont, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B24B 49/10 (2006.01); H01L 21/66 (2006.01); H01L 21/67 (2006.01); B24B 37/013 (2012.01); H01L 21/321 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H01L 22/26 (2013.01); B24B 37/013 (2013.01); B24B 49/105 (2013.01); H01L 21/31053 (2013.01); H01L 21/3212 (2013.01); H01L 21/67075 (2013.01); H01L 21/67092 (2013.01); H01L 21/67253 (2013.01); H01L 22/14 (2013.01); H01L 22/20 (2013.01); H01L 22/34 (2013.01);
Abstract

A method of controlling polishing includes storing a base measurement, the base measurement being a measurement of a substrate after deposition of at least one layer overlying a semiconductor wafer and before deposition of an outer layer over the at least one layer, after deposition of the outer layer over the at least one layer and during polishing of the outer layer on substrate, receiving a sequence of raw measurements of the substrate from an in-situ monitoring system, normalizing each raw measurement in the sequence of raw measurement to generate a sequence of normalized measurements using the raw measurement and the base measurement, and determining at least one of a polishing endpoint or an adjustment for a polishing rate based on at least the sequence of normalized measurements.


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