The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2020
Filed:
Sep. 06, 2018
Entegris, Inc., Billerica, MA (US);
Emanuel Cooper, Scarsdale, NY (US);
Steven Bilodeau, Oxford, CT (US);
Wen-Haw Dai, Hsinchu County, TW;
Min-Chieh Yang, Hsinchu County, TW;
Sheng-Hung Tu, Hsinchu, TW;
Hsing-Chen Wu, Yonghe, TW;
Sean Kim, Gyeonggi-do, KR;
SeongJin Hong, Cheongju-si, KR;
ENTEGRIS, INC., Billerica, MA (US);
Abstract
Described are compositions and methods useful for wet-etching a microelectronic device substrate that includes silicon nitride; the compositions including phosphoric acid, hexafluorosilicic acid, and an amino alkoxy silane, and optionally one or more additional optional ingredients; a wet etching method of a substrate that includes silicon nitride and silicon oxide, that uses a composition as described, can achieve useful or improved silicon nitride etch rate, useful or improved silicon nitride selectivity, a combination of these, and optionally a reduction in particles present at a substrate surface after etching.