The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2020
Filed:
Mar. 31, 2016
Applicant:
Versum Materials Us, Llc, Tempe, AZ (US);
Inventors:
Seiji Inaoka, Macungie, PA (US);
William Jack Casteel, Jr., Fountain Hill, PA (US);
Wen Dar Liu, Chupei, TW;
Assignee:
VERSUM MATERIALS US, LLC, Tempe, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C11D 7/50 (2006.01); C11D 11/00 (2006.01); C11D 3/00 (2006.01); C11D 7/08 (2006.01); C11D 7/10 (2006.01); C11D 7/26 (2006.01); C11D 7/32 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); G03F 7/42 (2006.01);
U.S. Cl.
CPC ...
C11D 11/0047 (2013.01); C11D 3/0073 (2013.01); C11D 7/08 (2013.01); C11D 7/10 (2013.01); C11D 7/261 (2013.01); C11D 7/265 (2013.01); C11D 7/3209 (2013.01); C11D 7/3218 (2013.01); C11D 7/3263 (2013.01); C11D 7/5022 (2013.01); G03F 7/423 (2013.01); G03F 7/425 (2013.01); G03F 7/426 (2013.01); H01L 21/02074 (2013.01); H01L 21/31133 (2013.01);
Abstract
A composition and method for removing copper-containing post-etch and/or post-ash residue from patterned microelectronic devices is described. The removal composition includes water, a fluoride ion source, an alkanolamine, sulfuric acid, and an organic acid. The compositions effectively remove the copper and cobalt-containing post-etch residue from the microelectronic device without damaging exposed low-k dielectric and metal interconnect materials.