The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2020

Filed:

Nov. 30, 2018
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chun-Han Chu, Hsinchu, TW;

Nai-Chia Chen, Hsinchu, TW;

Ping-Jung Huang, Douliou, TW;

Tsung-Min Chuo, New Taipei, TW;

Jui-Ming Shih, Hsinchu, TW;

Bi-Ming Yen, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01L 21/308 (2006.01); H01L 21/306 (2006.01); H01L 21/324 (2006.01); H01L 21/762 (2006.01); H01L 29/08 (2006.01); H01L 29/165 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7848 (2013.01); H01L 21/0206 (2013.01); H01L 21/02381 (2013.01); H01L 21/02532 (2013.01); H01L 21/02579 (2013.01); H01L 21/02667 (2013.01); H01L 21/3081 (2013.01); H01L 21/30625 (2013.01); H01L 21/324 (2013.01); H01L 21/76224 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/41791 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract

An embodiment method includes forming a patterned etch mask over a target layer and patterning the target layer using the patterned etch mask as a mask to form a patterned target layer. The method further includes performing a first cleaning process on the patterned etch mask and the patterned target layer, the first cleaning process including a first solution. The method additionally includes performing a second cleaning process to remove the patterned etch mask and form an exposed patterned target layer, the second cleaning process including a second solution. The method also includes performing a third cleaning process on the exposed patterned target layer, and performing a fourth cleaning process on the exposed patterned target layer, the fourth cleaning process comprising the first solution.


Find Patent Forward Citations

Loading…