The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2020
Filed:
Apr. 30, 2018
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Ming-Fa Wu, Kaohsiung, TW;
Tzung-Chi Fu, Miaoli, TW;
Chun-Che Lin, Tainan, TW;
Po-Chung Cheng, Zhongpu Shiang, TW;
Huai-Tei Yang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
An extreme ultra-violet (EUV) lithography system includes an EUV source and EUV scanner. A droplet generator provides a droplet stream in the EUV source. A gas shield is configured to surround the droplet stream. When a laser reacts a droplet in the stream, EUV radiation and ionized particles are produced. The gas shield can reduce contamination resulting from the ionized particles by conveying the ionized particles to a droplet catcher. Components of the EUV source may be biased with a voltage to repel or attract ionized particles to reduce contamination from the ionized particles.