The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2020
Filed:
Apr. 20, 2018
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Lai Wei Chih, Hsinchu, TW;
Monsen Liu, Zhudong Township, TW;
En-Hsiang Yeh, Hsinchu, TW;
Chuei-Tang Wang, Taichung, TW;
Chen-Hua Yu, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01Q 1/38 (2006.01); H01Q 1/22 (2006.01); H01L 23/00 (2006.01); H01L 23/66 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/48 (2006.01); H01L 23/498 (2006.01); H01L 23/522 (2006.01); H01Q 1/36 (2006.01); H01Q 9/04 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01Q 1/2283 (2013.01); H01L 21/486 (2013.01); H01L 21/56 (2013.01); H01L 23/481 (2013.01); H01L 23/49827 (2013.01); H01L 23/5226 (2013.01); H01L 23/66 (2013.01); H01L 24/02 (2013.01); H01L 24/19 (2013.01); H01L 24/96 (2013.01); H01Q 1/36 (2013.01); H01Q 9/0407 (2013.01); H01L 21/568 (2013.01); H01L 23/3121 (2013.01); H01L 2223/6677 (2013.01); H01L 2224/02379 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/73267 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/181 (2013.01);
Abstract
An antenna apparatus comprises a semiconductor die in a molding compound layer, a first through via is between a sidewall of the semiconductor die and a sidewall of the molding compound layer and an antenna structure over the molding compound layer, wherein a first portion of the antenna structure is directly over a top surface of the semiconductor die and a second portion of the antenna structure is directly over a top surface of the first through via.