The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2020
Filed:
Mar. 28, 2016
Intel Corporation, Santa Clara, CA (US);
Sansaptak Dasgupta, Hillsboro, OR (US);
Han Wui Then, Portland, OR (US);
Marko Radosavljevic, Portland, OR (US);
Peter G. Tolchinsky, Beaverton, OR (US);
Roza Kotlyar, Portland, OR (US);
Valluri R. Rao, Saratoga, CA (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
This disclosure pertains to a gallium nitride transistor that is formed in a trench etched into a silicon substrate. A gallium nitride layer is on the trench of the silicon substrate. A source electrode and a drain electrode reside on the gallium nitride layer. A gate electrode resides on the gallium nitride layer between the source electrode and the drain electrode. A first polarization layer resides on the gallium nitride layer between the source electrode and the gate electrode, and a second polarization layer resides on the gallium nitride layer between the gate electrode and the drain electrode. The silicon substrate can include a silicon 111 substrate.