The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2020

Filed:

Aug. 31, 2018
Applicant:

Carl Zeiss Smt Gmbh, Oberkochen, DE;

Inventors:

Eugen Foca, Ellwangen, DE;

Frank Schadt, Neu-Ulm, DE;

Uwe Hempelmann, Aalen, DE;

Frank Schleicher, Eislingen, DE;

Assignee:

CARL ZEISS SMT GMBH, Oberkochen, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01B 11/02 (2006.01); G03B 27/42 (2006.01); G03F 7/20 (2006.01); G01M 11/02 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70591 (2013.01); G01M 11/0271 (2013.01); G03F 7/70341 (2013.01); G03F 7/70958 (2013.01);
Abstract

Microlithographic projection exposure apparatus () has a projection lens () configured to image an object plane () onto an image plane (), wherein an immersion liquid is at least temporarily provided during operation of the projection exposure apparatus between the projection lens and the image plane, wherein a measurement structure () is arranged in the immersion liquid, and wherein the measurement structure is configured to generate a measurement pattern. The projection exposure apparatus also has a measurement device () configured to measure the measurement pattern. The measurement structure has an absorption layer () including silicon oxide and/or silicon oxynitride and/or nitride.


Find Patent Forward Citations

Loading…