The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2020
Filed:
Mar. 11, 2016
Taiyo Nippon Sanso Corporation, Tokyo, JP;
Spp Technologies Co., Ltd., Tokyo, JP;
Hiroshi Taka, Kawasaki, JP;
Masaya Yamawaki, Kai, JP;
Shoichi Murakami, Amagasaki, JP;
Masayasu Hatashita, Amagasaki, JP;
TAIYO NIPPON SANSO CORPORATION, Tokyo, JP;
SPP TECHNOLOGIES CO., LTD., Tokyo, JP;
Abstract
One object of the present invention is to provide a method for producing a silicon nitride film having a high hydrofluoric acid resistance, a high moisture resistance and an appropriate internal stress on a substrate of which the temperature is controlled at 250° C. or lower, the present invention provides a method for producing a silicon nitride film () by a plasma chemical vapor deposition method, wherein a processing gas obtained by adding a hydrogen reducing gas in a range of 200 to 2000 volumetric flow rate to an organosilane gas of 1 volumetric flow rate is used, a pressure in a process chamber () accommodating the substrate () is adjusted to be in a range of 35 to 400 Pa, and a density of high-frequency electric power applied to an electrode installed in the process chamber () is adjusted to be in a range of 0.2 to 3.5 W/cm.