The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2020

Filed:

Apr. 20, 2018
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Hanna Bamnolker, Cupertino, CA (US);

Joshua Collins, Sunnyvale, CA (US);

Tomas Sadilek, San Jose, CA (US);

Hyeong Seop Shin, Suwon-si, KR;

Xiaolan Ba, San Jose, CA (US);

Raashina Humayun, Los Altos, CA (US);

Michal Danek, Cupertino, CA (US);

Lawrence Schloss, Palo Alto, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/285 (2006.01); H01L 21/768 (2006.01); C23C 16/52 (2006.01); C23C 16/458 (2006.01); C23C 16/455 (2006.01); C23C 16/02 (2006.01); C23C 16/04 (2006.01); C23C 16/14 (2006.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 21/28556 (2013.01); C23C 16/0281 (2013.01); C23C 16/045 (2013.01); C23C 16/14 (2013.01); C23C 16/455 (2013.01); C23C 16/458 (2013.01); C23C 16/45523 (2013.01); C23C 16/52 (2013.01); H01L 21/28562 (2013.01); H01L 21/28568 (2013.01); H01L 21/76876 (2013.01); H01L 21/76877 (2013.01); H01L 27/11582 (2013.01);
Abstract

Methods of depositing fluorine-free tungsten by sequential CVD pulses, such as by alternately pulsing a fluorine-free tungsten precursor and hydrogen in cycles of temporally separated pulses, are provided. Some methods involve depositing fluorine-free tungsten by sequential CVD without depositing a tungsten nucleation layer. Methods also include depositing tungsten directly on a substrate surface using alternating pulses of a chlorine-containing tungsten precursor and hydrogen without treating the substrate surface. Methods also include depositing a tungsten layer using a reducing agent and fluorine-free tungsten-containing precursor and depositing bulk tungsten in sequential CVD cycles of alternating pulses of hydrogen and a tungsten-containing precursor.


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