The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2020
Filed:
Sep. 30, 2016
Intel Corporation, Santa Clara, CA (US);
Jessica M. Torres, Portland, OR (US);
Jeffery D. Bielefeld, Forest Grove, OR (US);
Mauro J. Kobrinsky, Portland, OR (US);
Christopher J. Jezewski, Portland, OR (US);
Gopinath Bhimarasetti, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Pore-filled dielectric materials for semiconductor structure fabrication, and methods of fabricating pore-filled dielectric materials for semiconductor structure fabrication, are described. In an example, a method of fabricating a pore-filled dielectric material for semiconductor structure fabrication includes forming a trench in a material layer. The method also includes filling the trench with a porous dielectric material using a spin-on deposition process. The method also includes filling pores of the porous dielectric material with a metal-containing material using an atomic layer deposition (ALD) process.