The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2019

Filed:

Dec. 21, 2015
Applicant:

Intel Ip Corporation, Santa Clara, CA (US);

Inventors:

Christian Geissler, Teugn, DE;

Sven Albers, Regensburg, DE;

Georg Seidemann, Landshut, DE;

Andreas Wolter, Regensburg, DE;

Klaus Reingruber, Langquaid, DE;

Thomas Wagner, Regelsbach, DE;

Marc Dittes, Regensburg, DE;

Assignee:

Intel IP Corporation, Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/00 (2006.01); H01L 21/768 (2006.01); H01L 23/525 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 24/02 (2013.01); H01L 21/768 (2013.01); H01L 23/525 (2013.01); H01L 23/53238 (2013.01); H01L 23/53252 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/02311 (2013.01); H01L 2224/02331 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/03464 (2013.01); H01L 2224/05008 (2013.01); H01L 2224/05017 (2013.01); H01L 2224/05111 (2013.01); H01L 2224/05124 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01022 (2013.01); H01L 2924/01028 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01049 (2013.01); H01L 2924/01074 (2013.01);
Abstract

An electrical device includes a redistribution layer structure, an inter-diffusing material contact structure and a vertical electrically conductive structure located between the redistribution layer structure and the inter-diffusing material contact structure. The vertical electrically conductive structure includes a diffusion barrier structure located adjacently to the inter-diffusing material contact structure. Further, the diffusion barrier structure and the redistribution layer structure comprise different lateral dimensions.


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