The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2019
Filed:
Jan. 27, 2017
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Chi-Kang Liu, Taipei, TW;
Jr-Jung Lin, Hsin-Chu, TW;
Huan-Just Lin, Hsin-Chu, TW;
Ming-Hsi Yeh, Hsin-Chu, TW;
Sung-Hsun Wu, Kaohsiung, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/308 (2006.01); H01L 21/033 (2006.01); H01L 21/66 (2006.01); H01L 21/3213 (2006.01); H01L 21/306 (2006.01); H01L 21/3065 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3088 (2013.01); H01L 21/0337 (2013.01); H01L 21/3065 (2013.01); H01L 21/3081 (2013.01); H01L 21/3085 (2013.01); H01L 21/3086 (2013.01); H01L 21/30604 (2013.01); H01L 21/32139 (2013.01); H01L 22/12 (2013.01); H01L 22/20 (2013.01); H01L 29/66795 (2013.01);
Abstract
To pattern a gate electrode, a mandrel of material is initially deposited and then patterned. In an embodiment the patterning is performed by performing a first etching process and to obtain a rough target and then to perform a second etching process with different etch parameters to obtain a precise target. The mandrel is then used to form spacers which can then be used to form masks to pattern the gate electrode.