The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2019
Filed:
Jul. 09, 2018
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Rajesh Prasad, Lexington, MA (US);
Tzu-Yu Liu, Somerville, MA (US);
Edwin Arevalo, Gloucester, MA (US);
Deven Mittal, Gloucester, MA (US);
Somchintana Norasetthekul, Gloucester, MA (US);
Kyuha Shim, Andover, MA (US);
Lauren Liaw, Gloucester, MA (US);
Takaski Shimizu, Gloucester, MA (US);
Nobuyuki Sasaki, Cupertino, CA (US);
Ryuichi Muira, Gloucester, MA (US);
Hiro Ito, Gloucester, MA (US);
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
A method may include depositing a mask layer on a substrate using physical vapor deposition, wherein an absolute value of a stress in the mask layer has a first value; and directing a dose of ions into the mask layer, wherein the absolute value of the stress in the mask layer has a second value, less than the first value, after the directing the dose.