The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2019
Filed:
Dec. 14, 2015
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Chen-Hua Yu, Hsinchu, TW;
Chi-Hsi Wu, Hsinchu, TW;
Der-Chyang Yeh, Hsinchu, TW;
Hsien-Wei Chen, Hsinchu, TW;
An-Jhih Su, Taoyuan County, TW;
Tien-Chung Yang, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2006.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0652 (2013.01); H01L 25/50 (2013.01); H01L 2225/06562 (2013.01); H01L 2225/06582 (2013.01); H01L 2225/06593 (2013.01);
Abstract
A semiconductor structure includes a first die, a second die horizontally disposed adjacent to the first die, a third die disposed over the first die and the second die, and a first dielectric material surrounding the first die and the second die, wherein a portion of the first dielectric material is disposed between the first die and the second die, and the third die is disposed over the portion of the dielectric.