The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2019
Filed:
May. 16, 2017
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chun-Kai Chen, Kaohsiung, TW;
Jung-Hau Shiu, New Taipei, TW;
Chia Cheng Chou, Keelung, TW;
Chung-Chi Ko, Nantou, TW;
Tze-Liang Lee, Hsinchu, TW;
Chih-Hao Chen, Hsinchu, TW;
Shing-Chyang Pan, Jhudong Township, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method includes forming a carbon-containing layer with a carbon atomic percentage greater than about 25 percent over a first hard mask layer, forming a capping layer over the carbon-containing layer, forming a first photo resist over the capping layer, and etching the capping layer and the carbon-containing layer using the first photo resist as a first etching mask. The first photo resist is then removed. A second photo resist is formed over the capping layer. The capping layer and the carbon-containing layer are etched using the second photo resist as a second etching mask. The second photo resist is removed. A third photo resist under the carbon-containing layer is etched using the carbon-containing layer as etching mask. A dielectric layer underlying the third photo resist is etched to form via openings using the third photo resist as etching mask. The via openings are filled with a conductive material.