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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10510561 B1

PDFFull Text
Date of Patent:
Dec. 17, 2019

Filed:

Jan. 27, 2017

Semiconductor device package including conformal metal cap contacting each semiconductor die

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Chen-Yu Tsai, Zhongli, TW;

Tsung-Shang Wei, Baoshan Township, TW;

Yu-Sheng Lin, Taichung, TW;

Wen-Chih Chiou, Hsin-Chu, TW;

Shin-Puu Jeng, Hsin-Chu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Erik Kielin

Int. Cl.
CPC ...
H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/16 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 23/60 (2006.01); H01L 25/00 (2006.01); H01L 21/683 (2006.01); H01L 23/498 (2006.01); H01L 23/538 (2006.01); H01L 25/065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/561 (2013.01); H01L 21/486 (2013.01); H01L 21/4817 (2013.01); H01L 21/4853 (2013.01); H01L 21/56 (2013.01); H01L 21/565 (2013.01); H01L 23/29 (2013.01); H01L 23/3185 (2013.01); H01L 23/3192 (2013.01); H01L 23/49816 (2013.01); H01L 23/49833 (2013.01); H01L 23/5384 (2013.01); H01L 23/5385 (2013.01); H01L 23/60 (2013.01); H01L 25/0655 (2013.01); H01L 25/50 (2013.01);
Abstract

In accordance with an embodiment a method of manufacturing a semiconductor device includes bonding a first semiconductor die and a second semiconductor die to a first substrate, forming a conductive layer over the first semiconductor die, the second semiconductor die, and the first substrate, applying an encapsulant over the conductive layer, and removing a portion of the encapsulant, wherein the removing the portion of the encapsulant exposes the conductive layer.

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