The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 10, 2019

Filed:

Oct. 24, 2017
Applicant:

Kla-tencor Corporation, Milpitas, CA (US);

Inventors:

Naomi Ittah, Ramat Gan, IL;

Nadav Gutman, Zichron Ya'aqov, IL;

Eran Amit, Haifa, IL;

Vincent Immer, Zikrom Yaakov, IL;

Einat Peled, Haifa, IL;

Assignee:

KLA-Tencor Corporation, Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/26 (2006.01); G01B 11/14 (2006.01); G01B 11/26 (2006.01); H01L 21/67 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 22/20 (2013.01); G01B 11/14 (2013.01); G01B 11/26 (2013.01); H01L 21/67253 (2013.01); H01L 22/12 (2013.01);
Abstract

A method of overlay control in silicon wafer manufacturing comprises firstly locating a target comprising a diffraction grating on a wafer layer; and then measuring the alignment of patterns in successive layers of the wafer. The location of the target may be done by the pupil camera rather than a vision camera by scanning the target to obtain pupil images at different locations along a first axis. The pupil images may comprise a first order diffraction pattern for each location. A measurement of signal intensity in the first order diffraction pattern is then obtained for each location. The variation of signal intensity with location along each axis is then analyzed to calculate the location of a feature in the target.


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