The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2019
Filed:
Jan. 31, 2017
Tokyo Electron Limited, Tokyo, JP;
Hitoshi Kato, Iwate, JP;
Masahiro Murata, Iwate, JP;
Jun Sato, Iwate, JP;
Shigehiro Miura, Iwate, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A film deposition method for filling a recessed pattern with a SiN film is provided. NHgroups are caused to adsorb on a surface of a substrate containing a recessed pattern formed in a top surface of the substrate by supplying a first process gas containing NHconverted to first plasma to the surface of the substrate containing the recessed pattern. The NHgroups is partially converted to N groups by supplying a second process gas containing Nconverted to second plasma to the surface of the substrate containing the recessed pattern on which the NHgroups is adsorbed. A silicon-containing gas is caused to adsorb on the NHgroups by supplying the silicon-containing gas to the surface of the substrate containing the recessed pattern on which the NHgroups and the N groups are adsorbed. The above steps are cyclically repeated.