The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2019
Filed:
Nov. 24, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chun-Han Chen, Changhua, TW;
Chen-Ming Lee, Taoyuan, TW;
Fu-Kai Yang, Hsinchu, TW;
Mei-Yun Wang, Chupei, TW;
Jr-Hung Li, Chupei, TW;
Bo-Cyuan Lu, New Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A FinFET device structure is provided. The FinFET device structure includes a fin structure formed over a substrate and a first gate structure formed over the fin structure. The FinFET device structure also includes a first capping layer formed over the first gate structure and a first etching stop layer over the first capping layer and the first gate structure. The FinFET device structure further includes a first source/drain (S/D) contact structure formed over the fin structure and adjacent to the first gate structure. A portion of the first etching stop layer which is directly above the first capping layer is higher than another portion of the first etching stop layer which is directly above the first gate spacer layer.