The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2019
Filed:
Dec. 19, 2016
Asml Netherlands B.v., Veldhoven, NL;
Paul Christiaan Hinnen, Veldhoven, NL;
Simon Gijsbert Josephus Mathijssen, Rosmalen, NL;
Maikel Robert Goosen, Eindhoven, NL;
Maurits Van Der Schaar, Eindhoven, NL;
Arie Jeffrey Den Boef, Waalre, NL;
ASML Netherlands B.V., Veldhoven, NL;
Abstract
A lithographic apparatus (LA) prints product features and at least one focus metrology pattern (T) on a substrate. The focus metrology pattern is defined by a reflective reticle and printing is performed using EUV radiation () incident at an oblique angle (θ). The focus metrology pattern comprises a periodic array of groups of first features (). A spacing (S) between adjacent groups of first features is much greater than a dimension (CD) of the first features within each group. Due to the oblique illumination, the printed first features become distorted and/or displaced as a function of focus error. Second featuresmay be provided as a reference against which displacement of the first features may be seen. Measurement of this distortion and/or displacement may be by measuring asymmetry as a property of the printed pattern. Measurement can be done at longer wavelengths, for example in the range 350-800 nm.