The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 05, 2019

Filed:

Nov. 29, 2017
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd, Hsinchu, TW;

Inventors:

Wei-Heng Lin, Taipei, TW;

Tung-Liang Shao, Hsinchu, TW;

Chih-Hang Tung, Hsinchu County, TW;

Chen-Hua Yu, Hsinchu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01); H01L 23/29 (2006.01); H01L 25/00 (2006.01); H01L 21/311 (2006.01); H01L 23/66 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 21/31111 (2013.01); H01L 21/56 (2013.01); H01L 23/291 (2013.01); H01L 23/315 (2013.01); H01L 23/66 (2013.01); H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/81 (2013.01); H01L 25/50 (2013.01); H01L 2223/6627 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05022 (2013.01); H01L 2224/05024 (2013.01); H01L 2224/1146 (2013.01); H01L 2224/13005 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/81191 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06568 (2013.01); H01L 2225/06582 (2013.01); H01L 2924/19032 (2013.01); H01L 2924/206 (2013.01); H01L 2924/2064 (2013.01);
Abstract

The present disclosure provides a semiconductor structure including a first chip having a first dielectric surface, a second chip having a second dielectric surface facing the first dielectric surface and maintaining a distance thereto, and an air gap between the second dielectric surface and the first dielectric surface. The first chip includes a plurality of first conductive lines in proximity to the first dielectric surface and parallel to each other, two adjacent first conductive lines each having a sidewall partially exposed from the first dielectric surface. The present disclosure further provides a method for manufacturing the semiconductor structure described herein.


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