The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 05, 2019

Filed:

Jul. 23, 2015
Applicants:

Nippon Micrometal Corporation, Saitama, JP;

Nippon Steel Chemical & Material Co., Ltd., Tokyo, JP;

Inventors:

Takashi Yamada, Saitama, JP;

Daizo Oda, Saitama, JP;

Ryo Oishi, Saitama, JP;

Tomohiro Uno, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C22C 5/04 (2006.01); H01L 23/00 (2006.01); C22C 9/00 (2006.01); B23K 35/02 (2006.01); B23K 35/30 (2006.01); C22C 9/04 (2006.01); C22C 9/06 (2006.01); B23K 101/40 (2006.01); H01L 23/495 (2006.01);
U.S. Cl.
CPC ...
H01L 24/45 (2013.01); B23K 35/0227 (2013.01); B23K 35/302 (2013.01); C22C 5/04 (2013.01); C22C 9/00 (2013.01); C22C 9/04 (2013.01); C22C 9/06 (2013.01); H01L 24/43 (2013.01); H01L 24/48 (2013.01); H01L 24/85 (2013.01); B23K 2101/40 (2018.08); H01L 23/49582 (2013.01); H01L 24/05 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/43 (2013.01); H01L 2224/4321 (2013.01); H01L 2224/43125 (2013.01); H01L 2224/43825 (2013.01); H01L 2224/43848 (2013.01); H01L 2224/43986 (2013.01); H01L 2224/45 (2013.01); H01L 2224/45005 (2013.01); H01L 2224/45015 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/45155 (2013.01); H01L 2224/45164 (2013.01); H01L 2224/45169 (2013.01); H01L 2224/45565 (2013.01); H01L 2224/45572 (2013.01); H01L 2224/45644 (2013.01); H01L 2224/45664 (2013.01); H01L 2224/45847 (2013.01); H01L 2224/45944 (2013.01); H01L 2224/45964 (2013.01); H01L 2224/4801 (2013.01); H01L 2224/48011 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48463 (2013.01); H01L 2224/48465 (2013.01); H01L 2224/48507 (2013.01); H01L 2224/48844 (2013.01); H01L 2224/48864 (2013.01); H01L 2224/78 (2013.01); H01L 2224/78301 (2013.01); H01L 2224/85 (2013.01); H01L 2224/85045 (2013.01); H01L 2224/85075 (2013.01); H01L 2224/85181 (2013.01); H01L 2224/85203 (2013.01); H01L 2224/85207 (2013.01); H01L 2224/85444 (2013.01); H01L 2224/85464 (2013.01); H01L 2924/00011 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/15738 (2013.01); H01L 2924/15763 (2013.01); H01L 2924/35121 (2013.01);
Abstract

There is provided a bonding wire for a semiconductor device including a coating layer having Pd as a main component on a surface of a Cu alloy core material and a skin alloy layer containing Au and Pd on a surface of the coating layer, the bonding wire further improving 2nd bondability on a Pd-plated lead frame and achieving excellent ball bondability even in a high-humidity heating condition. The bonding wire for a semiconductor device including the coating layer having Pd as a main component on the surface of the Cu alloy core material and the skin alloy layer containing Au and Pd on the surface of the coating layer has a Cu concentration of 1 to 10 at % at an outermost surface thereof and has the core material containing either or both of Pd and Pt in a total amount of 0.1 to 3.0% by mass, thereby achieving improvement in the 2nd bondability and excellent ball bondability in the high-humidity heating condition. Furthermore, a maximum concentration of Au in the skin alloy layer is preferably 15 at % to 75 at %.


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