The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2019
Filed:
Oct. 30, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Long-Yi Chen, Changhua County, TW;
Jia-Hong Chu, Hsinchu, TW;
Chi-Wen Lai, Kaohsiung, TW;
Chia-Ching Liang, Hualien County, TW;
Kai-Hsiung Chen, New Taipei, TW;
Yu-Ching Wang, Tainan, TW;
Po-Chung Cheng, Zhongpu Township, Chiayi County, TW;
Hsin-Chin Lin, Yunlin County, TW;
Meng-Wei Chen, Taichung, TW;
Kuei-Shun Chen, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method for forming a semiconductor device structure is provided. The method includes forming a first overlay grating over a substrate. The first overlay grating has a first strip portion and a second strip portion. The method includes forming a first layer over the first overlay grating. The first layer has a first trench elongated in a second elongated axis, the second elongated axis is substantially perpendicular to the first elongated axis, and the first trench extends across the first strip portion and the second strip portion. The method includes forming a second overlay grating over the first layer. The second overlay grating has a third strip portion and a fourth strip portion. The third strip portion and the fourth strip portion are elongated in the first elongated axis and are spaced apart from each other.