The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 29, 2019

Filed:

Aug. 10, 2016
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Shuhei Ogawa, Miyagi, JP;

Wanjae Park, Miyagi, JP;

Yoshihide Kihara, Miyagi, JP;

Masanobu Honda, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01L 21/027 (2006.01); H01L 21/768 (2006.01); H01L 21/308 (2006.01); H05H 1/46 (2006.01); H01L 21/311 (2006.01); H01J 37/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67069 (2013.01); H01J 37/00 (2013.01); H01L 21/0273 (2013.01); H01L 21/308 (2013.01); H01L 21/3086 (2013.01); H01L 21/31116 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01); H01L 21/76802 (2013.01); H05H 1/46 (2013.01);
Abstract

A plasma processing method of processing a processing target object, in which an organic film, a mask film and a resist film are stacked in sequence, by plasma includes a process of supplying a modifying gas, which is a Hgas, a hydrogen halide gas, or a mixed gas containing a rare gas and a Hgas or a hydrogen halide gas, into a chamber accommodating therein the processing target object in which a preset pattern is formed on the resist film; and modifying process of modifying the resist film of the processing target object by plasma of the modifying gas at a processing temperature equal to or less than −20° C.


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